发明申请
US20120267639A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
审中-公开
氮化物半导体器件及其制造方法
- 专利标题: NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 氮化物半导体器件及其制造方法
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申请号: US13448678申请日: 2012-04-17
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公开(公告)号: US20120267639A1公开(公告)日: 2012-10-25
- 发明人: Woo Chul JEON , Ki Yeol Park , Young Hwan Park
- 申请人: Woo Chul JEON , Ki Yeol Park , Young Hwan Park
- 申请人地址: KR Suwon
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Suwon
- 优先权: KR10-2011-0038613 20110425
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L21/336 ; H01L29/205
摘要:
Disclosed herein are a nitride semiconductor device and a method for manufacturing the same. According to an exemplary embodiment, there is provided a nitride semiconductor device, including: a nitride semiconductor layer having a 2DEG channel; a drain electrode ohmic-contacted with the nitride semiconductor layer; a source electrode Schottky-contacted with the nitride semiconductor layer, including a plurality of patterned protrusion portions protruded to the drain electrode direction, and including an ohmic pattern ohmic-contacted with the nitride semiconductor layer therein; a dielectric layer disposed on the nitride semiconductor layer between the drain electrode and the source electrode and over at least a portion of the source electrode including the patterned protrusion portions; and a gate electrode disposed on the dielectric, wherein a portion of the gate electrode is disposed on the dielectric layer over the patterned protrusion portions and a drain direction edge portion of the source electrode.
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