发明申请
- 专利标题： SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER
- 专利标题（中）： 半导体晶体管，半导体器件及其制造方法
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申请号： US13495746申请日： 2012-06-13
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公开(公告)号： US20120267688A1公开(公告)日： 2012-10-25
- 发明人: Sadanori YAMANAKA , Tomoyuki TAKADA , Masahiko HATA
- 申请人： Sadanori YAMANAKA , Tomoyuki TAKADA , Masahiko HATA
- 申请人地址： JP Tokyo
- 专利权人： SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人： SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-284279 20091215
- 主分类号： H01L29/267
- IPC分类号： H01L29/267 ; H01L21/20 ; H01L29/06
摘要：
To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.