发明申请
- 专利标题： VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
- 专利标题（中）： 垂直存储器件及其制造方法
-
申请号： US13442482申请日： 2012-04-09
-
公开(公告)号： US20120267702A1公开(公告)日： 2012-10-25
- 发明人: Jung-Geun JEE , Jin-Gyun Kim , Jun-Kyu Yang , Ji-Hoon Choi , Dong-Kyum Kim , Ki-Hyun Hwang
- 申请人： Jung-Geun JEE , Jin-Gyun Kim , Jun-Kyu Yang , Ji-Hoon Choi , Dong-Kyum Kim , Ki-Hyun Hwang
- 优先权： KR10-2011-0036603 20110420
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
A device includes a first GSL, a plurality of first word lines, a first SSL, a plurality of first insulation layer patterns, and a first channel. The first GSL, the first word lines, and the first SSL are spaced apart from each other on a substrate in a first direction perpendicular to a top surface of a substrate. The first insulation layer patterns are between the first GSL, the first word lines and the first SSL. The first channel on the top surface of the substrate extends in the first direction through the first GSL, the first word lines, the first SSL, and the first insulation layer patterns, and has a thickness thinner at a portion thereof adjacent to the first SSL than at portions thereof adjacent to the first insulation layer patterns.
信息查询
IPC分类:
