发明申请
- 专利标题： Method of Fabricating Isolated Capacitors and Structure Thereof
- 专利标题（中）： 制造隔离电容器及其结构的方法
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申请号： US13533099申请日： 2012-06-26
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公开(公告)号： US20120267754A1公开(公告)日： 2012-10-25
- 发明人: Oh-Jung KWON , Junedong LEE , Paul C. PARRIES , Dominic J. SCHEPIS
- 申请人： Oh-Jung KWON , Junedong LEE , Paul C. PARRIES , Dominic J. SCHEPIS
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/92
- IPC分类号： H01L29/92
摘要：
A structure and method is provided for fabricating isolated capacitors. The method includes simultaneously forming a plurality of deep trenches and one or more isolation trenches surrounding a group or array of the plurality of deep trenches through a SOI and doped poly layer, to an underlying insulator layer. The method further includes lining the plurality of deep trenches and one or more isolation trenches with an insulator material. The method further includes filling the plurality of deep trenches and one or more isolation trenches with a conductive material on the insulator material. The deep trenches form deep trench capacitors and the one or more isolation trenches form one or more isolation plates that isolate at least one group or array of the deep trench capacitors from another group or array of the deep trench capacitors.