发明申请
- 专利标题: SEMICONDUCTOR WAFER, ELECTRONIC DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER
- 专利标题(中): 半导体晶体管,电子器件及其制造方法
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申请号: US13548837申请日: 2012-07-13
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公开(公告)号: US20120280275A1公开(公告)日: 2012-11-08
- 发明人: Masahiko HATA , Hiroyuki SAZAWA
- 申请人: Masahiko HATA , Hiroyuki SAZAWA
- 申请人地址: JP Tokyo
- 专利权人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-007463 20100115
- 主分类号: H01L29/267
- IPC分类号: H01L29/267 ; H01L21/20
摘要:
Provided is a semiconductor wafer including: a base wafer whose surface is made of a silicon crystal: a SixGe1-xC (0≦x