发明申请
- 专利标题： SEMICONDUCTOR DEVICE INCLUDING GATE OPENINGS
- 专利标题（中）： 半导体器件，包括栅极开口
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申请号： US13463197申请日： 2012-05-03
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公开(公告)号： US20120280291A1公开(公告)日： 2012-11-08
- 发明人: Jae-kyu Lee , Sang-hyun Hong
- 申请人： Jae-kyu Lee , Sang-hyun Hong
- 优先权： KR10-2011-0042633 20110504
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
According to example embodiments, a semiconductor device includes a substrate, a device isolation layer over the substrate that defines an active region of the substrate, a gate electrode crossing over the active region in between a source region and a drain region of the active region. The gate electrode defines at least one gate opening. The at least one gate opening may expose a portion of a boundary between the active region and the device isolation layer.
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