发明申请
US20120280292A1 SEMICONDUCTOR DEVICES WITH SCREENING COATING TO INHIBIT DOPANT DEACTIVATION
有权
具有屏蔽涂层的半导体器件，以抑制眩光消除
- 专利标题： SEMICONDUCTOR DEVICES WITH SCREENING COATING TO INHIBIT DOPANT DEACTIVATION
- 专利标题（中）： 具有屏蔽涂层的半导体器件，以抑制眩光消除
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申请号： US13503868申请日： 2010-10-18
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公开(公告)号： US20120280292A1公开(公告)日： 2012-11-08
- 发明人: Mikael T. Bjoerk , Joachim Knoch , Heike E. Riel , Walter Heinrich Riess , Heinz Schmid
- 申请人： Mikael T. Bjoerk , Joachim Knoch , Heike E. Riel , Walter Heinrich Riess , Heinz Schmid
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 优先权： EP09174663.6 20091030
- 国际申请： PCT/IB2010/054707 WO 20101018
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A semiconductor device and a method for fabricating the semiconductor device. The device includes: a doped semiconductor having a source region, a drain region, a channel between the source and drain regions, and an extension region between the channel and each of the source and drain regions; a gate formed on the channel; and a screening coating on each of the extension regions. The screening coating includes: (i) an insulating layer that has a dielectric constant that is no greater than about half that of the extension regions and is formed directly on the extension regions, and (ii) a screening layer on the insulating layer, where the screening layer screens the dopant ionization potential in the extension regions to inhibit dopant deactivation.
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