发明申请
- 专利标题： ONE-TRANSISTOR COMPOSITE-GATE MEMORY
- 专利标题（中）： 单晶体复合栅存储器
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申请号： US13554577申请日： 2012-07-20
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公开(公告)号： US20120280306A1公开(公告)日： 2012-11-08
- 发明人: Cem Basceri , Gurtej S. Sandhu
- 申请人： Cem Basceri , Gurtej S. Sandhu
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be assigned a data value, providing the ability to store one or more bits of data in a single memory cell. To control the threshold voltage, the oxygen vacancies may be manipulated by trapping electrons within the vacancies, freeing trapped electrons from the vacancies, moving the vacancies within the trapping layer and annihilating the vacancies.
公开/授权文献
- US08786005B2 One-transistor composite-gate memory 公开/授权日：2014-07-22
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