发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13551425申请日： 2012-07-17
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公开(公告)号： US20120280401A1公开(公告)日： 2012-11-08
- 发明人: Makoto TSUTSUE , Masaki UTSUMI
- 申请人： Makoto TSUTSUE , Masaki UTSUMI
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 优先权： JP2003-379754 20031110
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region. Part of the seal ring structure formed in the dielectric film in which the dual damascene interconnect is formed is continuous. A protection film formed on the multilayer structure has an opening on the seal ring. A cap layer connected to the seal ring is formed in the opening.
公开/授权文献
- US08618618B2 Semiconductor device 公开/授权日：2013-12-31
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