发明申请
- 专利标题: OXIDE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 氧化物薄膜晶体管及其制造方法
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申请号: US13552185申请日: 2012-07-18
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公开(公告)号: US20120282734A1公开(公告)日: 2012-11-08
- 发明人: Sun-il KIM , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
- 申请人: Sun-il KIM , Jae-cheol Lee , I-hun Song , Young-soo Park , Chang-jung Kim , Jae-chul Park
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 优先权: KR10-2007-0087307 20070829
- 主分类号: H01L21/36
- IPC分类号: H01L21/36 ; H01L21/336
摘要:
An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.
公开/授权文献
- US08470634B2 Method of manufacturing oxide thin film transistor 公开/授权日:2013-06-25