发明申请
- 专利标题： PLASMA DOPING METHOD WITH GATE SHUTTER
- 专利标题（中）： 等离子切割方法与门开关
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申请号： US13560648申请日： 2012-07-27
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公开(公告)号： US20120285818A1公开(公告)日： 2012-11-15
- 发明人: Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
- 申请人： Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 优先权： JPP.2005-099149 20050330
- 主分类号： C23C14/34
- IPC分类号： C23C14/34
摘要：
In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.
公开/授权文献
- US08652953B2 Plasma doping method with gate shutter 公开/授权日：2014-02-18