发明申请
- 专利标题: Germanium Photodetector
- 专利标题(中): 锗光检测器
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申请号: US13556597申请日: 2012-07-24
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公开(公告)号: US20120288992A1公开(公告)日: 2012-11-15
- 发明人: Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
- 申请人: Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
公开/授权文献
- US08614116B2 Germanium photodetector 公开/授权日:2013-12-24
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