发明申请
- 专利标题: SOI SiGe-BASE LATERAL BIPOLAR JUNCTION TRANSISTOR
- 专利标题(中): SOI SiGe-BASE横向双极晶体管晶体管
-
申请号: US13556372申请日: 2012-07-24
-
公开(公告)号: US20120289018A1公开(公告)日: 2012-11-15
- 发明人: Tak H. Ning , Kevin K. Chan , Marwan H. Khater
- 申请人: Tak H. Ning , Kevin K. Chan , Marwan H. Khater
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/331
- IPC分类号: H01L21/331
摘要:
A lateral heterojunction bipolar transistor (HBT) is formed on a semiconductor-on-insulator substrate. The HBT includes a base including a doped silicon-germanium alloy base region, an emitter including doped silicon and laterally contacting the base, and a collector including doped silicon and laterally contacting the base. Because the collector current is channeled through the doped silicon-germanium base region, the HBT can accommodate a greater current density than a comparable bipolar transistor employing a silicon channel. The base may also include an upper silicon base region and/or a lower silicon base region. In this case, the collector current is concentrated in the doped silicon-germanium base region, thereby minimizing noise introduced to carrier scattering at the periphery of the base. Further, parasitic capacitance is minimized because the emitter-base junction area is the same as the collector-base junction area.
公开/授权文献
- US08420493B2 SOI SiGe-base lateral bipolar junction transistor 公开/授权日:2013-04-16