发明申请
- 专利标题： STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK
- 专利标题（中）： 用于排放超极本超薄膜的结构
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申请号： US13112536申请日： 2011-05-20
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公开(公告)号： US20120292509A1公开(公告)日： 2012-11-22
- 发明人: You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
- 申请人： You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
- 主分类号： H01J37/26
- IPC分类号： H01J37/26 ; H05F3/02
摘要：
A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
公开/授权文献
- US08575573B2 Structure for discharging extreme ultraviolet mask 公开/授权日：2013-11-05
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