Invention Application
- Patent Title: GALIUM-NITRIDE LIGHT EMITTING DEVICE OF MICROARRAY TYPE STRUCTURE AND MANUFACTURING THEREOF
- Patent Title (中): 微波型结构及其制造的氮化钠发光装置
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Application No.: US13473561Application Date: 2012-05-16
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Publication No.: US20120292634A1Publication Date: 2012-11-22
- Inventor: Sung Bum BAE
- Applicant: Sung Bum BAE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONIC AND TELECOMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONIC AND TELECOMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2011-0046309 20110517
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/42
Abstract:
Disclosed are a microarray type nitride light emitting device and a method of manufacturing the same. More particularly, a uniform current distribution property is ensured by dividing a fine light emitting region by using a first transparent contact layer according to a resistance change property in heat treatment of a material of a transparent conducting oxide used as a transparent contact layer, and connecting the divided light emitting regions by using a second transparent contact layer.
Public/Granted literature
- US09041012B2 Galium-nitride light emitting device having a microarray-type structure Public/Granted day:2015-05-26
Information query
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