发明申请
US20120293915A1 HIGH ENERGY DENSITY STORAGE MATERIAL DEVICE USING NANOCHANNEL STRUCTURE
有权
使用纳米通道结构的高能量密度存储材料设备
- 专利标题： HIGH ENERGY DENSITY STORAGE MATERIAL DEVICE USING NANOCHANNEL STRUCTURE
- 专利标题（中）： 使用纳米通道结构的高能量密度存储材料设备
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申请号： US13559095申请日： 2012-07-26
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公开(公告)号： US20120293915A1公开(公告)日： 2012-11-22
- 发明人: Richard A. Haight , Stephen M. Rossnagel
- 申请人： Richard A. Haight , Stephen M. Rossnagel
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01G9/07
- IPC分类号： H01G9/07 ; B82Y99/00
摘要：
A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor.
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