发明申请
- 专利标题： Semiconductor Device
- 专利标题（中）： 半导体器件
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申请号： US13545389申请日： 2012-07-10
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公开(公告)号： US20120294082A1公开(公告)日： 2012-11-22
- 发明人: Sun Mi Park
- 申请人： Sun Mi Park
- 申请人地址： KR Icheon-si
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2009-0082071 20090901
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A semiconductor device comprises a transistor comprising a gate, a source, a drain, and a gate insulating layer, and an auxiliary line formed over the drain and electrically insulated from the drain. During a turn-off operation of the transistor, voltage to increase a resistance of the drain is supplied to the auxiliary line.
公开/授权文献
- US08610198B2 Semiconductor device 公开/授权日：2013-12-17