发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件及制造半导体器件的方法
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申请号： US13468457申请日： 2012-05-10
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公开(公告)号： US20120298993A1公开(公告)日： 2012-11-29
- 发明人: Masaya Nagata
- 申请人： Masaya Nagata
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-115633 20110524
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/66
摘要：
A semiconductor device including: a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a vertical hole is formed along the thickness direction of the semiconductor substrate; a vertical hole wiring portion that includes a vertical hole electrode formed on a side wall of the base material portion that forms the vertical hole; a metallic film that is formed within the insulating film and that is electrically connected to the vertical hole wiring portion; and a conductive protective film that is formed to be in contact with the metallic film within the insulating film and that is formed in a region that includes a contact region of a probe during a probe test that is performed in the middle of manufacture on a film face of the metallic film.
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