发明申请
- 专利标题: Multiple Threshold Voltages in Field Effect Transistor Devices
- 专利标题(中): 场效应晶体管器件中的多个阈值电压
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申请号: US13560240申请日: 2012-07-27
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公开(公告)号: US20120299118A1公开(公告)日: 2012-11-29
- 发明人: Dechao Guo , Keith Kwong Hon Wong
- 申请人: Dechao Guo , Keith Kwong Hon Wong
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/088
- IPC分类号: H01L27/088
摘要:
A field effect transistor device includes a first conductive channel disposed on a substrate, a second conductive channel disposed on the substrate, a first gate stack formed on the first conductive channel, the first gate stack including a metallic layer having a first oxygen content, a second gate stack a formed on the second conductive channel, the second gate stack including a metallic layer having a second oxygen, an ion doped source region connected to the first conductive channel and the second conductive channel, and an ion doped drain region connected to the first conductive channel and the second conductive channel.