发明申请
US20120299174A1 Semiconductor Device and Method of Stacking Semiconductor Die in Mold Laser Package Interconnected By Bumps and Conductive Vias
有权
半导体器件和堆叠半导体模具的方法，激光器包括由冲击和导电通孔互连
- 专利标题： Semiconductor Device and Method of Stacking Semiconductor Die in Mold Laser Package Interconnected By Bumps and Conductive Vias
- 专利标题（中）： 半导体器件和堆叠半导体模具的方法，激光器包括由冲击和导电通孔互连
-
申请号： US13566872申请日： 2012-08-03
-
公开(公告)号： US20120299174A1公开(公告)日： 2012-11-29
- 发明人: DaeSik Choi , WonJun Ko , JaEun Yun
- 申请人： DaeSik Choi , WonJun Ko , JaEun Yun
- 申请人地址： SG Singapore
- 专利权人： STATS CHIPPAC, LTD.
- 当前专利权人： STATS CHIPPAC, LTD.
- 当前专利权人地址： SG Singapore
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/34
摘要：
A semiconductor wafer contains a plurality of first semiconductor die. The semiconductor wafer is mounted to a carrier. A channel is formed through the semiconductor wafer to separate the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. An encapsulant is deposited over the carrier and first semiconductor die and into the channel while a side portion and surface portion of the second semiconductor die remain exposed from the encapsulant. A first conductive via is formed through the encapsulant in the channel. A second conductive via is formed through the encapsulant over a contact pad of the first semiconductor die. A conductive layer is formed over the encapsulant between the first and second conductive vias. An insulating layer is formed over the conductive layer and encapsulant. The carrier is removed. An interconnect structure is formed over the first conductive via.