Invention Application
US20120300147A1 DOUBLE SELF-ALIGNED METAL OXIDE TFT 有权
双重自对准金属氧化物TFT

  • Patent Title: DOUBLE SELF-ALIGNED METAL OXIDE TFT
  • Patent Title (中): 双重自对准金属氧化物TFT
  • Application No.: US13366503
    Application Date: 2012-02-06
  • Publication No.: US20120300147A1
    Publication Date: 2012-11-29
  • Inventor: Chan-Long ShiehGang Yu
  • Applicant: Chan-Long ShiehGang Yu
  • Main IPC: G02F1/136
  • IPC: G02F1/136
DOUBLE SELF-ALIGNED METAL OXIDE TFT
Abstract:
A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.
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