发明申请
US20120305890A1 LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND LIGHTING DEVICE 有权
发光二极管,发光二极管灯和照明装置

  • 专利标题: LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND LIGHTING DEVICE
  • 专利标题(中): 发光二极管,发光二极管灯和照明装置
  • 申请号: US13574894
    申请日: 2011-01-20
  • 公开(公告)号: US20120305890A1
    公开(公告)日: 2012-12-06
  • 发明人: Noriyuki AiharaNoriyoshi SeoNoritaka Muraki
  • 申请人: Noriyuki AiharaNoriyoshi SeoNoritaka Muraki
  • 申请人地址: JP Minato-ku, Tokyo
  • 专利权人: SHOWA DENKO K.K.
  • 当前专利权人: SHOWA DENKO K.K.
  • 当前专利权人地址: JP Minato-ku, Tokyo
  • 优先权: JP2010-013531 20100125; JP2010-183206 20100818
  • 国际申请: PCT/JP2011/050966 WO 20110120
  • 主分类号: H01L33/04
  • IPC分类号: H01L33/04
LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND LIGHTING DEVICE
摘要:
A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0≦X4≦1, 0
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