发明申请
- 专利标题： FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING FIELD-EFFECT TRANSISTOR
- 专利标题（中）： 场效应晶体管和制作场效应晶体管的方法
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申请号： US13587744申请日： 2012-08-16
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公开(公告)号： US20120305915A1公开(公告)日： 2012-12-06
- 发明人: Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Yuji Sone
- 申请人： Yukiko Abe , Naoyuki Ueda , Yuki Nakamura , Yuji Sone
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-163076 20090709; JP2010-131676 20100609
- 主分类号： H01L29/26
- IPC分类号： H01L29/26
摘要：
A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step.
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