发明申请
- 专利标题: SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13575959申请日: 2011-02-01
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公开(公告)号: US20120305930A1公开(公告)日: 2012-12-06
- 发明人: Naoki Makita , Hiroki Mori , Masaki Saitoh
- 申请人: Naoki Makita , Hiroki Mori , Masaki Saitoh
- 申请人地址: JP Osaka-shi, Osaka
- 专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人地址: JP Osaka-shi, Osaka
- 优先权: JP2010-021616 20100202
- 国际申请: PCT/JP2011/052010 WO 20110201
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/8238 ; H01L21/336
摘要:
A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer. Accordingly, a driving voltage of the semiconductor device provided with the n-type TFT and the p-type TFT can be reduced.
公开/授权文献
- US08901650B2 Semiconductor device, and manufacturing method for same 公开/授权日:2014-12-02