发明申请
US20120308476A1 METHODS OF FORMING METAL OXIDE NANOSTRUCTURES, AND NANOSTRUCTURES THEREOF
有权
形成金属氧化物纳米结构的方法及其纳米结构
- 专利标题： METHODS OF FORMING METAL OXIDE NANOSTRUCTURES, AND NANOSTRUCTURES THEREOF
- 专利标题（中）： 形成金属氧化物纳米结构的方法及其纳米结构
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申请号： US13571791申请日： 2012-08-10
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公开(公告)号： US20120308476A1公开(公告)日： 2012-12-06
- 发明人: Ho-Cheol Kim , Robert D. Miller , Oun Ho Park
- 申请人： Ho-Cheol Kim , Robert D. Miller , Oun Ho Park
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： C01G23/047
- IPC分类号： C01G23/047
摘要：
A method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure.
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