发明申请
US20120311407A1 METHODS OF OPERATING NON-VOLATILE MEMORY DEVICES DURING WRITE OPERATION INTERRUPTION, NON-VOLATILE MEMORY DEVICES, MEMORIES AND ELECTRONIC SYSTEMS OPERATING THE SAME
有权
在写操作中断期间操作非易失性存储器件的方法，非易失性存储器件，存储器和操作其的电子系统
- 专利标题： METHODS OF OPERATING NON-VOLATILE MEMORY DEVICES DURING WRITE OPERATION INTERRUPTION, NON-VOLATILE MEMORY DEVICES, MEMORIES AND ELECTRONIC SYSTEMS OPERATING THE SAME
- 专利标题（中）： 在写操作中断期间操作非易失性存储器件的方法，非易失性存储器件，存储器和操作其的电子系统
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申请号： US13193191申请日： 2011-07-28
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公开(公告)号： US20120311407A1公开(公告)日： 2012-12-06
- 发明人: Kwang Jin Lee , Yeong Taek Lee , Woo Yeong Cho , Hoi Ju Chung
- 申请人： Kwang Jin Lee , Yeong Taek Lee , Woo Yeong Cho , Hoi Ju Chung
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2011-0051095 20110530
- 主分类号： H03M13/05
- IPC分类号： H03M13/05 ; G06F11/10
摘要：
A non-volatile memory device may operate by writing a portion of a new codeword to an address in the device that stores an old codeword, as part of a write operation. An interruption of the write operation can be detected before completion, which indicates that the address stores the portion of the new codeword and a portion of the old codeword. The portion of the old codeword can be combined with the portion of the new codeword to provide an updated codeword. Error correction bits can be generated using the updated codeword and the error correction bits can be written to the address.