发明申请
- 专利标题: RECESSED GATE FIELD EFFECT TRANSISTOR
- 专利标题(中): 闭门控场效应晶体管
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申请号: US13494965申请日: 2012-06-12
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公开(公告)号: US20120313144A1公开(公告)日: 2012-12-13
- 发明人: John H. ZHANG , Lawrence A. Clevenger , Carl Radens , Yiheng Xu
- 申请人: John H. ZHANG , Lawrence A. Clevenger , Carl Radens , Yiheng Xu
- 申请人地址: US NY Hopewell Junction US TX Coppell
- 专利权人: International Business Machines,STMicroelectronics, Inc.
- 当前专利权人: International Business Machines,STMicroelectronics, Inc.
- 当前专利权人地址: US NY Hopewell Junction US TX Coppell
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A semiconductor device having a gate positioned in a recess between the source region and a drain region that are adjacent either side of the gate electrode. A channel region is below a majority of the source region as well as a majority of the drain region and the entire gate electrode.
公开/授权文献
- US08680577B2 Recessed gate field effect transistor 公开/授权日:2014-03-25