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Invention Application
US20120313159A1 NON-VOLATILE MEMORY DEVICES INCLUDING GATES HAVING REDUCED WIDTHS AND PROTECTION SPACERS AND METHODS OF MANUFACTURING THE SAME 有权
非易失性存储器件，包括具有减小的宽度和保护间隔的门及其制造方法

  • Patent Title: NON-VOLATILE MEMORY DEVICES INCLUDING GATES HAVING REDUCED WIDTHS AND PROTECTION SPACERS AND METHODS OF MANUFACTURING THE SAME
  • Patent Title (中): 非易失性存储器件，包括具有减小的宽度和保护间隔的门及其制造方法
  • Application No.: US13468552
    Application Date: 2012-05-10
  • Publication No.: US20120313159A1
    Publication Date: 2012-12-13
  • Inventor: Jae-Hwang Sim
  • Applicant: Jae-Hwang Sim
  • Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee: Samsung Electronics Co., Ltd.
  • Priority: KR10-2011-0056993 20110613
  • Main IPC: H01L29/792
  • IPC: H01L29/792
NON-VOLATILE MEMORY DEVICES INCLUDING GATES HAVING REDUCED WIDTHS AND PROTECTION SPACERS AND METHODS OF MANUFACTURING THE SAME
Abstract:
Non-volatile memory devices and methods of manufacturing the same are disclosed. In a non-volatile memory device, widths of a metal gate and an upper portion of a base gate in a gate electrode are less than the width of a hard mask pattern disposed on the metal gate. First and second protection spacers are disposed on opposing sidewalls of the metal gate and on opposing sidewalls of the upper portion of the base gate, respectively.
Abstract(Chinese):

公开了非易失性存储器件及其制造方法。 在非易失性存储器件中，栅电极中的金属栅极和基极栅极的上部的宽度小于设置在金属栅极上的硬掩模图案的宽度。 第一和第二保护间隔物分别设置在金属栅极的相对的侧壁和基栅的上部的相对侧壁上。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/792 ......带有电荷捕获栅绝缘体，例如MNOS存储晶体管
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