Invention Application
US20120314487A1 Magnetic Random Access Memory Devices Including Multi-Bit Cells
有权
包括多位单元的磁性随机存取存储器件
- Patent Title: Magnetic Random Access Memory Devices Including Multi-Bit Cells
- Patent Title (中): 包括多位单元的磁性随机存取存储器件
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Application No.: US13158312Application Date: 2011-06-10
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Publication No.: US20120314487A1Publication Date: 2012-12-13
- Inventor: Mourad El Baraji , Neal Berger , Lucien Lombard , Lucian Prejbeanu , Ricardo Alves Ferreira Costa E Sousa , Guillaume Prenat
- Applicant: Mourad El Baraji , Neal Berger , Lucien Lombard , Lucian Prejbeanu , Ricardo Alves Ferreira Costa E Sousa , Guillaume Prenat
- Applicant Address: US CA Sunnyvale
- Assignee: CROCUS TECHNOLOGY, INC.
- Current Assignee: CROCUS TECHNOLOGY, INC.
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C11/416
- IPC: G11C11/416

Abstract:
A magnetic random access memory (“MRAM”) cell includes: (1) a first magnetic layer having a first magnetization direction and a magnetic anisotropy axis; (2) a second magnetic layer having a second magnetization direction; and (3) a spacer layer disposed between the first magnetic layer and the second magnetic layer. The MRAM cell also includes a field line magnetically coupled to the MRAM cell and configured to induce a write magnetic field along a magnetic field axis, and the magnetic anisotropy axis is tilted relative to the magnetic field axis. During a write operation, the first magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, at least one of the m directions is aligned relative to the magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis.
Public/Granted literature
- US08576615B2 Magnetic random access memory devices including multi-bit cells Public/Granted day:2013-11-05
Information query
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