发明申请
US20120319090A1 DEVICE, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE DEVICE AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR 有权
装置,薄膜​​晶体管,制造装置的方法和制造薄膜晶体管的方法

DEVICE, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE DEVICE AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR
摘要:
A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a π-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.
信息查询
0/0