Hermetically sealed semiconductor wafer packages that include a first bond ring on a first wafer facing a complementary surface of a second bond ring on a second wafer. The package includes first and second standoffs of a first material, having a first thickness, formed on a surface of the first bond ring. The package also includes a eutectic alloy (does not have to be eutectic, typically it will be an alloy not specific to the eutectic ratio of the elements) formed from a second material and the first material to create a hermetic seal between the first and second wafer, the eutectic alloy formed by heating the first and second wafers to a temperature above a reflow temperature of the second material and below a reflow temperature of the first material, wherein the eutectic alloy fills a volume between the first and second standoffs and the first and second bond rings, and wherein the standoffs maintain a prespecified distance between the first bond ring and the second bond ring.