Invention Application
- Patent Title: Atmospheric Plasma Apparatus and Manufacturing Method Thereof
- Patent Title (中): 大气等离子体装置及其制造方法
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Application No.: US13318354Application Date: 2011-07-01
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Publication No.: US20120319579A1Publication Date: 2012-12-20
- Inventor: Maocheng Yan , Hsiang-Yin Shih
- Applicant: Maocheng Yan , Hsiang-Yin Shih
- Applicant Address: CN Shenzhen City, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technolohy Co.
- Current Assignee: Shenzhen China Star Optoelectronics Technolohy Co.
- Current Assignee Address: CN Shenzhen City, Guangdong
- Priority: CN201110164519.X 20110617
- International Application: PCT/CN11/76750 WO 20110701
- Main IPC: H01J17/06
- IPC: H01J17/06 ; H01J9/395

Abstract:
An atmospheric plasma apparatus and a method for manufacturing the same are disclosed. The atmospheric plasma apparatus includes an anode, a cathode, and an insulation medium disposed between the anode and the cathode. An ionizable gas is filled between the anode and the cathode. The cathode includes a plurality of plasma generating and removing units, each of which includes a plasma generating region and a plasma removing region. The plasma generating regions and the plasma removing regions are distributed uniformly and equal to each other in area. Any two plasma removing regions among every three plasma removing regions which are adjacent to each other have a same center-to-center distance. In this way, erosion caused by the plasma to the cathode and the insulation medium may be reduced to prolong the service life of the atmospheric plasma apparatus, and uniformity of cleaning of a substrate surface may be improved.
Public/Granted literature
- US08564199B2 Atmospheric plasma apparatus and manufacturing method thereof Public/Granted day:2013-10-22
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