发明申请
- 专利标题: MAGNETIC RANDOM ACCESS MEMORY
- 专利标题(中): 磁性随机存取存储器
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申请号: US13590634申请日: 2012-08-21
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公开(公告)号: US20120320667A1公开(公告)日: 2012-12-20
- 发明人: Nobuyuki ISHIWATA , Hideaki NUMATA , Norikazu OHSHIMA
- 申请人: Nobuyuki ISHIWATA , Hideaki NUMATA , Norikazu OHSHIMA
- 申请人地址: JP Tokyo
- 专利权人: NEC CORPORATION
- 当前专利权人: NEC CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-108480 20060411
- 主分类号: G11C11/02
- IPC分类号: G11C11/02
摘要:
A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.
公开/授权文献
- US08547733B2 Magnetic random access memory 公开/授权日:2013-10-01
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