发明申请
- 专利标题: MEMORY DEVICE WITH REDUCED SENSE TIME READOUT
- 专利标题(中): 具有降低感知时间读数的存储器件
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申请号: US13214257申请日: 2011-08-22
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公开(公告)号: US20120320671A1公开(公告)日: 2012-12-20
- 发明人: Avraham Meir , Naftali Sommer , Eyal Gurgi
- 申请人: Avraham Meir , Naftali Sommer , Eyal Gurgi
- 申请人地址: IL Herzliya Pituach
- 专利权人: ANOBIT TECHNOLOGIES
- 当前专利权人: ANOBIT TECHNOLOGIES
- 当前专利权人地址: IL Herzliya Pituach
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A method for data storage includes providing at least first and second readout configurations for reading storage values from analog memory cells, such that the first readout configuration reads the storage values with a first sense time and the second readout configuration reads the storage values with a second sense time, shorter than the first sense time. A condition is evaluated with respect to a read operation that is to be performed over a group of the memory cells. One of the first and second readout configurations is selected responsively to the evaluated condition. The storage values are read from the group of the memory cells using the selected readout configuration.
公开/授权文献
- US08400858B2 Memory device with reduced sense time readout 公开/授权日:2013-03-19
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