发明申请
- 专利标题: MEMORY DEVICE READOUT USING MULTIPLE SENSE TIMES
- 专利标题(中): 使用多个感应时间的存储器件读数
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申请号: US13284909申请日: 2011-10-30
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公开(公告)号: US20120320672A1公开(公告)日: 2012-12-20
- 发明人: Avraham Meir , Barak Baum , Naftali Sommer
- 申请人: Avraham Meir , Barak Baum , Naftali Sommer
- 申请人地址: IL Herzliya Pituach
- 专利权人: ANOBIT TECHNOLOGIES LTD.
- 当前专利权人: ANOBIT TECHNOLOGIES LTD.
- 当前专利权人地址: IL Herzliya Pituach
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A method for data storage includes storing data in a group of analog memory cells by writing respective storage values into the memory cells in the group. One or more of the memory cells in the group are read using a first readout operation that senses the memory cells with a first sense time. At least one of the memory cells in the group is read using a second readout operation that senses the memory cells with a second sense time, longer than the first sense time. The data stored in the group of memory cells is reconstructed based on readout results of the first and second readout operations.
公开/授权文献
- US08493783B2 Memory device readout using multiple sense times 公开/授权日:2013-07-23
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