发明申请
- 专利标题： METHOD OF PROCESSING MIM CAPACITORS TO REDUCE LEAKAGE CURRENT
- 专利标题（中）： 处理MIM电容器以减少泄漏电流的方法
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申请号： US13159842申请日： 2011-06-14
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公开(公告)号： US20120322220A1公开(公告)日： 2012-12-20
- 发明人: Hanhong Chen , Wim Deweerd , Xiangxin Rui , Sandra Malhotra , Hiroyuki Ode
- 申请人： Hanhong Chen , Wim Deweerd , Xiangxin Rui , Sandra Malhotra , Hiroyuki Ode
- 申请人地址： JP Tokyo US CA San Jose
- 专利权人： ELPIDA MEMORY, INC.,INTERMOLECULAR, INC.
- 当前专利权人： ELPIDA MEMORY, INC.,INTERMOLECULAR, INC.
- 当前专利权人地址： JP Tokyo US CA San Jose
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for processing dielectric materials and electrodes to decrease leakage current is disclosed. The method includes a post dielectric anneal treatment in an oxidizing atmosphere to reduce the concentration of oxygen vacancies in the dielectric material. The method further includes a post metallization anneal treatment in an oxidizing atmosphere to reduce the concentration of interface states at the electrode/dielectric interface and to further reduce the concentration of oxygen vacancies in the dielectric material.