发明申请
- 专利标题： SEMICONDUCTOR DEVICE PRODUCTION METHOD
- 专利标题（中）： 半导体器件生产方法
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申请号： US13440262申请日： 2012-04-05
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公开(公告)号： US20120322226A1公开(公告)日： 2012-12-20
- 发明人: Naomi Yanai , Yuka Kase , Hiroyuki Ogawa
- 申请人： Naomi Yanai , Yuka Kase , Hiroyuki Ogawa
- 申请人地址： JP Yokohama-shi
- 专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址： JP Yokohama-shi
- 优先权： JP2011-135617 20110617
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; B08B3/08 ; C23G1/02
摘要：
A semiconductor device production method includes: treating a wafer which contains a silicon substrate with dilute hydrofluoric acid in a bath; introducing water into the bath while discharging the dilute hydrofluoric acid from the bath; and introducing H2O2 and warm water warmer than the above-mentioned water into the bath after the discharge of dilute hydrofluoric acid from the bath in such a manner that the introduction of warm water is started simultaneously with the start of H2O2 supply or subsequently to the start of H2O2 supply.
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