Disclosed is a plasma processing apparatus which performs plasma processing under substantially atmospheric pressure to a non-planar subject to be processed. In the plasma processing apparatus, a pair of conductive wires are disposed at an interval of 1 mm or less on a dielectric board that conforms with the shape of the subject, the conductive wires are covered with a dielectric thin film having a thickness of 1 mm or less by, for instance, thermally spraying a dielectric material over the conductive wires, and plasma is generated along the shape of subject by applying high-frequency power to the pair of conductive wires.