Invention Application
- Patent Title: NANOSENSOR AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 纳米传感器及其制造方法
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Application No.: US13410883Application Date: 2012-03-02
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Publication No.: US20120325664A1Publication Date: 2012-12-27
- Inventor: Jeo-young SHIM , Tae-han JEON , Dong-ho LEE , Hee-jeong JEONG , Seong-ho CHO
- Applicant: Jeo-young SHIM , Tae-han JEON , Dong-ho LEE , Hee-jeong JEONG , Seong-ho CHO
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2011-0060796 20110622
- Main IPC: G01N27/453
- IPC: G01N27/453 ; B05D3/10 ; B44C1/22

Abstract:
A nanosensor comprising a substrate having a hole; a first insulating layer disposed on the substrate and having a first nanopore at a location corresponding to the hole in the substrate; first and second electrodes disposed on the first insulating layer, wherein the first and second electrodes are spaced apart from each other with the first nanopore positioned therebetween; a first electrode pad disposed on at least a portion of the first electrode; a second electrode pad disposed on at least a portion of the second electrode; and a protective layer disposed on at least a portion of the first and second electrode pads; as well as a method for manufacturing same.
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