发明申请
- 专利标题： METAL-FREE INTEGRATED CIRCUITS COMPRISING GRAPHENE AND CARBON NANOTUBES
- 专利标题（中）： 包含石墨和碳纳米管的无金属集成电路
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申请号： US13604254申请日： 2012-09-05
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公开(公告)号： US20120326129A1公开(公告)日： 2012-12-27
- 发明人: Yu-Ming Lin , Jeng-Bang Yau
- 申请人： Yu-Ming Lin , Jeng-Bang Yau
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
An integrated circuit includes a graphene layer, the graphene layer comprising a region of undoped graphene, the undoped graphene comprising a channel of a transistor, and a region of doped graphene, the doped graphene comprising a contact of the transistor; and a gate of the transistor, the gate comprising a carbon nanotube film. A method of fabricating an integrated circuit comprising graphene and carbon nanotubes, includes forming a graphene layer; doping a portion of the graphene layer, resulting in doped graphene and undoped graphene; forming a carbon nanotube film; and etching the carbon nanotube film to form a gate of a transistor, wherein the transistor further comprises a channel comprising the undoped graphene and a contact comprising the doped graphene. A transistor includes a gate, the gate comprising a carbon nanotube film; a channel, the channel comprising undoped graphene; and a contact, the contact comprising doped graphene.
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