Invention Application
- Patent Title: SUPERJUNCTION DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 超级装置及其制造方法
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Application No.: US13603658Application Date: 2012-09-05
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Publication No.: US20120326226A1Publication Date: 2012-12-27
- Inventor: Shengan XIAO
- Applicant: Shengan XIAO
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Current Assignee: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Current Assignee Address: CN Shanghai
- Priority: CN201110265394.X 20010908
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/20
Abstract:
A superjunction device is disclosed, wherein P-type regions in an active region are not in contact with the N+ substrate, and the distance between the surface of the N+ substrate and the bottom of the P-type regions in the active region is greater than the thickness of a transition region in the N-type epitaxial layer. Methods for manufacturing the superjunction device are also disclosed. The present invention is capable of improving the uniformity of reverse breakdown voltage and overshoot current handling capability in a superjunction device.
Public/Granted literature
- US08653586B2 Superjunction device and method for manufacturing the same Public/Granted day:2014-02-18
Information query
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