Invention Application
- Patent Title: PHOTODIODE THAT INCORPORATES A CHARGE BALANCED SET OF ALTERNATING N AND P DOPED SEMICONDUCTOR REGIONS
- Patent Title (中): 包含N和P多个半导体区域的充电平衡组的光电
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Application No.: US13165050Application Date: 2011-06-21
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Publication No.: US20120326260A1Publication Date: 2012-12-27
- Inventor: William French , Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko
- Applicant: William French , Peter J. Hopper , Philipp Lindorfer , Vladislav Vashchenko
- Main IPC: H01L31/06
- IPC: H01L31/06 ; H01L31/18
Abstract:
A photodiode comprises a first terminal formed in a surface of a semiconductor substrate; a second terminal formed in the substrate surface and spaced apart from the first terminal; and a plurality of adjacent alternating N-type and P-type diffusion regions formed in the substrate surface between the first terminal and the second terminal.
Information query
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