发明申请
US20120327734A1 SEMICONDUCTOR MEMORY, SYSTEM, AND METHOD OF OPERATING SEMICONDUCTOR MEMORY
有权
半导体存储器,系统和操作半导体存储器的方法
- 专利标题: SEMICONDUCTOR MEMORY, SYSTEM, AND METHOD OF OPERATING SEMICONDUCTOR MEMORY
- 专利标题(中): 半导体存储器,系统和操作半导体存储器的方法
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申请号: US13485266申请日: 2012-05-31
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公开(公告)号: US20120327734A1公开(公告)日: 2012-12-27
- 发明人: Takahiko SATO
- 申请人: Takahiko SATO
- 申请人地址: JP Yokohama-shi
- 专利权人: FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人: FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址: JP Yokohama-shi
- 优先权: JP2011-141846 20110627
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
A memory has memory cells in a matrix; a first selection unit selecting any of first signal lines in the memory cells, in response to an access request; a second selection unit selecting any of second signal lines in the memory cells, after the first selection unit starts operating; a first voltage generation unit generating a first power supply voltage supplied to the first selection unit; a second voltage generation unit generating a second power supply voltage supplied to the second selection unit, when a start-up signal is active; a switch short-circuiting first and second power supply lines, when a short-circuit signal is active; and a power supply voltage control unit which activates the start-up signal in response to the access request, activates the short-circuit signal after a predetermined time elapses since activation of the start-up signal, deactivates the short-circuit signal and the start-up signal after completion of access operations.