Invention Application
- Patent Title: METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE
- Patent Title (中): 制造薄膜晶体管基板的方法和薄膜晶体管基板中使用的感光性组合物
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Application No.: US13599518Application Date: 2012-08-30
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Publication No.: US20120328991A1Publication Date: 2012-12-27
- Inventor: Hoon KANG , Jae-sung KIM , Yang-ho JUNG , Hi-kuk LEE
- Applicant: Hoon KANG , Jae-sung KIM , Yang-ho JUNG , Hi-kuk LEE
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2007-0073496 20070723
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
Disclosed is a method of producing a thin film transistor substrate having high light sensitivity, heat-resistance, impact resistance, and a photosensitive composition used by the same, the method including forming data wires on an insulating substrate, forming an organic insulating film on the data wires by applying a photosensitive composition comprising a terpolymer, where the terpolymer is derived from monomers of an unsaturated carboxylic acid, an unsaturated carboxylic acid anhydride, or a mixture thereof, an unsaturated epoxy group-containing compound, and an olefinic compound.
Public/Granted literature
Information query
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