发明申请
- 专利标题： MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE
- 专利标题（中）： 记忆元件，其制造方法和存储器件
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申请号： US13527764申请日： 2012-06-20
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公开(公告)号： US20130001496A1公开(公告)日： 2013-01-03
- 发明人: Masayuki Shimuta , Shuichiro Yasuda , Tetsuya Mizuguchi , Kazuhiro Ohba , Katsuhisa Aratani
- 申请人： Masayuki Shimuta , Shuichiro Yasuda , Tetsuya Mizuguchi , Kazuhiro Ohba , Katsuhisa Aratani
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-146113 20110630
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/62
摘要：
A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side.
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