发明申请
US20130001702A1 ENHANCING MOSFET PERFORMANCE BY OPTIMIZING STRESS PROPERTIES
审中-公开
通过优化应力特性提高MOSFET的性能
- 专利标题： ENHANCING MOSFET PERFORMANCE BY OPTIMIZING STRESS PROPERTIES
- 专利标题（中）： 通过优化应力特性提高MOSFET的性能
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申请号： US13613081申请日： 2012-09-13
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公开(公告)号： US20130001702A1公开(公告)日： 2013-01-03
- 发明人: Kangguo Cheng , Bruce B. Doris , Ying Zhang
- 申请人： Kangguo Cheng , Bruce B. Doris , Ying Zhang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/092
- IPC分类号： H01L27/092
摘要：
A device and method for improving performance of a transistor includes gate structures formed on a substrate having a spacing therebetween. The gate structures are formed in an operative relationship with active areas formed in the substrate. A stress liner is formed on the gate structures. An angled ion implantation is applied to the stress liner such that ions are directed at vertical surfaces of the stress liner wherein portions of the stress liner in contact with the active areas are shielded from the ions due to a shadowing effect provided by a height and spacing between adjacent structures.
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