发明申请
US20130001754A1 IN-SITU PHOTORESIST STRIP DURING PLASMA ETCHING OF ACTIVE HARD MASK
有权
活动硬掩模等离子体蚀刻中的现场光电子条纹
- 专利标题： IN-SITU PHOTORESIST STRIP DURING PLASMA ETCHING OF ACTIVE HARD MASK
- 专利标题（中）： 活动硬掩模等离子体蚀刻中的现场光电子条纹
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申请号： US13607390申请日： 2012-09-07
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公开(公告)号： US20130001754A1公开(公告)日： 2013-01-03
- 发明人: Sangjun Cho , Tom Choi , Taejoon Han , Sean Kang , Prabhakara Gopaladasu , Bi-Ming Yen
- 申请人： Sangjun Cho , Tom Choi , Taejoon Han , Sean Kang , Prabhakara Gopaladasu , Bi-Ming Yen
- 申请人地址： US CA Fremont
- 专利权人： LAM RESEARCH CORPORATION
- 当前专利权人： LAM RESEARCH CORPORATION
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/3065 ; H01L29/02
摘要：
A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.
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