发明申请
- 专利标题: Method and Apparatuses for Integrated Circuit Substrate Manufacture
- 专利标题(中): 集成电路基板制造的方法和装置
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申请号: US13170820申请日: 2011-06-28
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公开(公告)号: US20130001791A1公开(公告)日: 2013-01-03
- 发明人: Fan YEUNG , Raymond (Kwok Cheung) TSANG , Edward LAW
- 申请人: Fan YEUNG , Raymond (Kwok Cheung) TSANG , Edward LAW
- 申请人地址: US CA Irvine
- 专利权人: Broadcom Corporation
- 当前专利权人: Broadcom Corporation
- 当前专利权人地址: US CA Irvine
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L21/50
摘要:
Embodiments described herein provide a method of manufacturing integrated circuit (IC) devices. The method includes coupling a first surface of a first intermediate substrate to a first surface of a second intermediate substrate, forming a first plurality of patterned metal layers on a second surface of the first intermediate substrate to form a first substrate and a second plurality of patterned metal layers on a second surface of the second intermediate substrate to form a second substrate, and separating the first and second substrates. Each of the first substrate and the second substrate is configured to facilitate electrical interconnection between a respective IC die and a respective printed circuit board (PCB).
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