发明申请
US20130003769A1 GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE
有权
基于氮化镓的半导体激光器件，以及用于制造基于氮化镓的半导体激光器件的方法
- 专利标题： GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DEVICE
- 专利标题（中）： 基于氮化镓的半导体激光器件，以及用于制造基于氮化镓的半导体激光器件的方法
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申请号： US13431043申请日： 2012-03-27
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公开(公告)号： US20130003769A1公开(公告)日： 2013-01-03
- 发明人: Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
- 申请人： Tetsuya Kumano , Masaki Ueno , Takashi Kyono , Yohei Enya , Katsunori Yanashima , Kunihiko Tasai , Hiroshi Nakajima
- 申请人地址： JP Minato-ku JP Osaka-shi
- 专利权人： SONY CORPORATION,SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SONY CORPORATION,SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Minato-ku JP Osaka-shi
- 优先权： JP2011-144653 20110629
- 主分类号： H01S5/34
- IPC分类号： H01S5/34 ; H01L21/18
摘要：
A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer 23.