发明申请
- 专利标题： POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 电力装置及其制造方法
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申请号： US13353990申请日： 2012-01-19
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公开(公告)号： US20130009164A1公开(公告)日： 2013-01-10
- 发明人: Jae Hoon Lee
- 申请人： Jae Hoon Lee
- 优先权： KR10-2011-0066016 20110704
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
Provided is a power device. The power device may include a two-dimensional electron gas (2-DEG) layer in a portion corresponding to a gate electrode pattern since a second nitride layer is further formed on a lower portion of the gate electrode pattern after a first nitride layer is formed and thus, may be capable of performing a normally-OFF operation. Accordingly, the power device may adjust generation of the 2-DEG layer based on a voltage of a gate, and may reduce power consumption. The power device may regrow only the portion corresponding to the gate electrode pattern or may etch a portion excluding the portion corresponding to the gate electrode pattern and thus, a recess process may be omissible, a reproducibility of the power device may be secured, and a manufacturing process may be simplified.
公开/授权文献
- US08564022B2 Power device and method for manufacturing the same 公开/授权日：2013-10-22
信息查询
IPC分类:
